The FactSage FSupsi ultrapure silicon database

 

Summary

 

TO OBTAIN :

 

-         A LIST OF all the binary AND TERNARY SYSTEMS WHICH HAVE BEEN ASSESSED

 

-         A LIST OF ALL ASSESSED phases IN EACH OF THE SYSTEMS

 

CLICK ON “List of optimized systems”

 

General

 

The FactSage FSupsi alloy database is directed primarily to the liquid state of silicon-rich alloys, with the particular aim of enabling calculation of impurity concentration levels in ultra-pure silicon. 

 

In addition, a number of elements are included in a Si-rich solid solution phase (diamond structure), although assessed data for solid Si-rich alloys are fewer and less reliable.

 

Solid phases which may precipitate at low concentration levels of B, C, N and O are also included in the database.

 

The elements included as impurities in liquid silicon are:

 

    Al,    Au,    B,    C,    Ca,    Co,    Cr,    Cu,    Fe,    Ge,    In,    Mg,    Mn,   

 

    N,    Ni,    O,    P,    Pb,    Sb,    Sn,    Te,    Ti,    V,    Zn

 

The elements included in the Si-rich solid solution are:

 

    B,    C,    Ge,    N,    Sn,    Ti,    Zn

 

All other elements are treated as insoluble in solid Si.

 

The major source of data has been the assessments contained in the SGTE2004 Solution Database, together with more recent published assessments. One or two original assessments have been carried out as part of the development work on this database.      

 

Specific information on each alloy system can be obtained from the list of references supplied below.

 

 

Composition Ranges

 

As mentioned above, the database is intended primarily for calculations relating to

Si-rich liquid alloys – generally up to a few percent total solute concentration. Less reliable calculations involving Si-rich solid alloys may be performed for a limited number of impurity elements.

 

Temperature Ranges

 

The database is generally valid for temperatures from about 200 to 300oC below the melting temperature of Si (1414oC) to about 1800oC.

 

Modeling

 

In the assessments, the liquid phase has been described using a simple polynomial expression based on a substitutional solution with random mixing. The Si-rich phase with the diamond structure has been described using the same model.

 

References

Pure Element Data

 

  A.T.Dinsdale, SGTE Data for Pure Elements, Calphad 15 (1991) 317-425

 

Binary Silicon Systems

 

Si-Al:    H.Feufel, T.Godecke, H.L.Lukas, F.Sommer, J.Alloys and Compounds 247 (1997) 31-42

Si-Au:   P.Y.Chevalier, Thermodata, Grenoble, private communication, July 1998

Si-B:     S.G.Fries, H.L.Lukas, COST 507 (1998) ISBN 92-828-3902-8 pp.126-128

Si-C:     J.Lacaze, B.Sundman, Met.Trans. 22A (1991) 2211-2223 (C-Fe-Si)

Si-Ca:   C.Anglezio, unpublished work (1991)

Si-Co:   S.D.Choi, Calphad 16 (1992) 151-159

Si-Cr:    C.A.Coughanowr, I.Ansara, H.L.Lukas, Calphad 18 (1994) 125-140

Si-Cu:   M.Jacobs, T.Buhler, COST 507 (1998) ISBN 92-828-3902-8, pp.178-181

Si-Fe:   J.Lacaze, B.Sundman, Met.Trans. 22A (1991) 2211-2223 (C-Fe-Si)

Si-Ge:   C.Bergman, R.Chastel, R.Castanet, J.Phase Equilib. 13 (1992) 113-119

Si_In:    R.W.Olesinski, N.Kanani, G.J.Abbaschian, Bull. Alloy Phase Diags. 6 (1985) 128-130

Si-Mg:   H.Feufel, T.Godecke, H.L.Lukas, F.Sommer, J.Alloys and Compounds 247 (1997) 31-42

Si-Mn:   J.E.Tibballs, SI, Oslo, Norway (1991) Rep. 890221-5

Si-N:      P.J.Spencer, 2002; based on ASM published diagram, 1996

Si-Ni:     M.Lindholm, B.Sundman, Met.Trans 26A (1996) 2897-2903

Si-O:      P.J.Spencer, 2002; based on ASM published diagram, 1996

Si-P:      NPL, unpublished work (1989)

Si-Pb:    R.W.Olesinski, G.J.Abbaschian, Bull.Alloy Phase Diags. 5 (1984) 271-273

Si-Sb:    R.W.Olesinski, G.J.Abbaschian, Bull.Alloy Phase Diags. 6 (1985) 445-448

Si-Sn:    M.H.G.Jacobs, P.J.Spencer, Calphad 20 (1996) 89-91

Si-Te:    P.J.Spencer, 2002; based on ASM published diagram, 1996

Si-Ti:     H.Seifert, COST 507 (1998) ISBN 92-828-3902-8, pp.266-269

Si-V:      M.H.Rand, COST 507 (1994) ISBN 2-87263-156-9, p.182

Si-Zn:    M.H.G.Jacobs, P.J.Spencer, Calphad 20 (1996) 307-320 _